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Dr Alexandra Suvorova
Research Interests:- High resolution imaging and analytical transmission electron microscopy - studies of bulk materials, layers and interfaces.
- Lattice defect and impurity behaviour in semiconducting materials.
- The effects of semiconductor processing treatments - oxidation, ion implantation, annealing, etc.
Areas of Expertise:- Microscopy techniques: SEM, Variable Pressure SEM, TEM, HREM, EFTEM, EELS, EDS X-ray microanalysis
- Materials sample preparation
- Nanoscale materials and interfaces
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Current Projects:
Characterisation of nanostructures for spintronics by analytical electron microscopy.
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Recent Publications:Suvorov A.V., Suvorova A.A. Synthesis of buried silicon nitride layer in SiC by nitrogen implantation. Nuclear Instruments and Methods in Physics Research B 257 217-221 2007
Suvorova A A, Samarin S N. Secondary electron imaging of SiC-based structures in scanning electron microscope. Surface Science 2007
S. Samarin, O. M. Artamonov, A.D. Sergeant, A.A. Suvorova, J.F. Williams, Application of two-electron spectroscopy in reflection for studying electronic structure of surfaces and thin films. Journal of Electron Spectroscopy and Related Phenomena 2007
Y.Kim, H. J. Joyce, Q. Gao, H. Hoe Tan, C. Jagadish, M. Paladugu, Jin Zou, and A. Suvorova, Influence of Nanowire Density on the Shape and Optical Properties of Ternary InGaAs Nanowires. Nano Letters Vol.6, No. 4, 599-604, 2006
D. T. Dekadjevi, A. Suvorova, S. Pogossian, D. Spenato, J. Ben Youssef, Experimental evidence for the role of nonuniform modes in the asymmetric magnetization reversal of a Ni/NiO system. Physical Review B 74, 100402-1-4 R 2006
L Yan, C M Lopez, R P Shrestha, E A Irene, AA Suvorova, M Saunders, Magnesium Oxide as a Candidate High-k Gate Dielectric. Applied Physics Letters 88, 142901-1-3 2006
H. Huang, K.J. Winchester, A. Suvorova, B.R. Lawn, Y. Liu, X.Z. Hu, J.M. Dell, L. Faraone, Effect of Deposition Conditions on Mechanical Properties of Low-Temperature PECVD Silicon Nitride Films. Materials Science and Engineering A 453–459 2006
H Huang, A Suvorova, K Winchester, J Dell and L Faraone, Characteristics of Low Temperature PECVD Silicon Nitride for MEMS Structural Materials. International Journal of Modern Physics, B 20 (25-27): 3799-3804 2006 |
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